Damage in ion implanted silicon measured by x‐ray diffraction
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.362482
Reference14 articles.
1. Defects production and annealing in self‐implanted Si
2. Defect production in Si(100) by19F,28Si,40Ar, and131Xe implantation at room temperature
3. Pre-amorphization damage study in as-implanted silicon
4. EPR and X-ray diffraction study of damage produced by implantation of B ions (50 keV, 1 MeV) or Si ions (50 keV, 700 keV, 1.5 MeV) into silicon
5. X-ray Rocking-Curve Analysis of Crystals with Buried Amorphous Layers. Case of Ion-Implanted Silicon
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