Effects of annealing temperature on buried oxide precipitates in He and O co-implanted Si-Reference-Cited by-同舟云学术

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Effects of annealing temperature on buried oxide precipitates in He and O co-implanted Si

Published:2013-07 Issue: Volume:93 Page:22-27
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Li B.S.,Zhang C.H.,Wang Z.G.,Zhong Y.R.,Wang B.Y.,Qin X.B.,Zhang L.Q.,Yang Y.T.,Wang R.,Jin Y.F.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference35 articles.

1. Frontiers of silicon-on-insulator

2. The Role of Silicon in Optoelectronics

3. The state-of-the-art in SOI technology

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Microstructure Evolution in He-Implanted Si at 600 °C Followed by 1000 °C Annealing;Materials;2021-09-06

2. Lattice disorder and N elemental segregation in ion implanted GaN epilayer;Applied Surface Science;2020-01

3. Transmission electron microscopy and high-resolution electron microscopy studies of structural defects induced in Si single crystals implanted by helium ions at 600 °C;Applied Surface Science;2018-10

4. Effect of implantation temperature on exfoliation of H2+-implanted Si;Vacuum;2014-11

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