Thin germanium-carbon alloy layers grown directly on silicon for metal-oxide-semiconductor device applications
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2195008
Reference23 articles.
1. Self-Aligned n-Channel Germanium MOSFETs With a Thin Ge Oxynitride Gate Dielectric and Tungsten Gate
2. A TaN–<tex>$hbox HfO_2$</tex>–Ge pMOSFET With Novel<tex>$hbox SiH_4$</tex>Surface Passivation
3. Strained Ge channel p-type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates
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3. Gas Source Techniques for Molecular Beam Epitaxy of Highly Mismatched Ge Alloys;Crystals;2016-12-02
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