Ultrasmooth epitaxial Ge grown on (001) Si utilizing a thin B-doped SiGe buffer layer
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/7/i=11/a=111301/pdf
Reference16 articles.
1. Si/SiGe heterostructures: from material and physics to devices and circuits
2. High-performance Ge-on-Si photodetectors
3. Reduced pressure–chemical vapor deposition of Ge thick layers on Si(001) for 1.3–1.55-μm photodetection
4. Molecular-beam epitaxy growth of device-compatible GaAs on silicon substrates with thin (∼80 nm) Si[sub 1−x]Ge[sub x] step-graded buffer layers for high-κ III-V metal-oxide-semiconductor field effect transistor applications
5. High-speed GaAs metal gate semiconductor field effect transistor structure grown on a composite Ge∕GexSi1−x∕Si substrate
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1. Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region;Nanomaterials;2023-02-02
2. Study of Si–Ge Interdiffusion in Laser Recrystallization of Ge Epitaxial Film on Si Substrate;Science of Advanced Materials;2021-01-01
3. Solar-Blind Photodetector Based on Single Crystal Ga2O3 Film Prepared by a Unique Ion-Cutting Process;ACS Applied Electronic Materials;2020-12-28
4. Modeling of continuous wave laser melting of germanium epitaxial films on silicon substrates;Materials Express;2017-10-01
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