Highly boron-doped germanium layers on Si(001) grown by carbon-mediated epitaxy
Author:
Funder
Deutsche Forschungsgemeinschaft
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/1361-6641/aade69/pdf
Reference54 articles.
1. Ge-on-Si p-i-n Photodiodes With a 3-dB Bandwidth of 49 GHz
2. Ge-on-Si laser operating at room temperature
3. Holisitic device exploration for 7nm node
4. Carbon-mediated growth of thin, fully relaxed germanium films on silicon
5. Lattice Distorsion around Charged Impurity in Semiconductors
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