Ultrashallow (<10nm) p+∕n junction formed by B18H22 cluster ion implantation and excimer laser annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2405863
Reference17 articles.
1. Cluster-ion implantation: An approach to fabricate ultrashallow junctions in silicon
2. Study of reverse annealing behaviors of p[sup +]/n ultrashallow junction formed using solid phase epitaxial annealing
3. Decaborane (B/sub 10/H/sub 14/) ion implantation technology for sub-0.1-μm PMOSFET's
4. Shallow junction formation by polyatomic cluster ion implantation
5. Ultra-shallow junction formation by B18H22 ion implantation
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