Composition and Strain Evolution of Undoped Si0.8Ge0.2 Layers Submitted to UV-Nanosecond Laser Annealing-Reference-Cited by-同舟云学术

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Composition and Strain Evolution of Undoped Si0.8Ge0.2 Layers Submitted to UV-Nanosecond Laser Annealing

Published:2018-07-20 Issue:7 Volume:86 Page:29-39
ISSN:1938-6737
Container-title:ECS Transactions
language:en
Short-container-title:ECS Trans.

Author:

Dagault Lea,Acosta-Alba Pablo,Kerdilès Sébastien,Barnes Jean-Paul,Hartmann Jean-Michel,Gergaud Patrice,Nguyen Than Tra,Grenier Adeline,Aubin Joris,Cristiano Fuccio

Publisher

The Electrochemical Society

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Strain behavior and dopant activation of heavily in-situ B-doped SiGe epitaxial films treated by nanosecond laser annealing;Materials Science in Semiconductor Processing;2024-06

2. Pulsed laser melting of implant amorphized Si1-xGex thin films;Applied Surface Science;2021-10

3. Pulsed laser annealing for advanced technology nodes: Modeling and calibration;Applied Surface Science;2020-03

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