Growth and characterization of InxGa1−xAs/InyGa1−yAs strained‐layer superlattice on InP substrate
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.336348
Reference9 articles.
1. Superlattice and Negative Differential Conductivity in Semiconductors
2. Defects in epitaxial multilayers
3. Stimulated emission in strained‐layer quantum‐well heterostructures
4. Properties of InxGa1−xAs‐GaAs strained‐layer quantum‐well‐heterostructure injection lasers
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1. Effect of tensile strained InyGa1 − yAs spacer/barrier on the optical quality of compressive strained InxGa1 − xAs quantum well grown by metalorganic vapor-phase epitaxy;Journal of Crystal Growth;1997-07
2. Type II recombination and band offset determination in a tensile strained InGaAs quantum well;Applied Physics Letters;1997-06-16
3. Dependence on channel potential structures of I–V characteristics in InAlAs/InGaAs pseudomorphic high electron mobility transistors;Journal of Applied Physics;1997-02
4. Shallow strainedInxGa1−xAs/InyGa1−yAs superlattices embedded inp-i-ndiodes: Structural properties and optical response;Physical Review B;1996-06-15
5. Low Pressure OMVPE Grown Compressive Strained Ingaas QWS Surrounded by Tensile Strained Ingaas Spacers;MRS Proceedings;1996
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