Low-voltage operation and high endurance of 5-nm ferroelectric Hf0.5Zr0.5O2 capacitors-Reference-Cited by-同舟云学术

Low-voltage operation and high endurance of 5-nm ferroelectric Hf0.5Zr0.5O2 capacitors

Published:2018-10-29 Issue:18 Volume:113 Page:182903
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kim Si Joon¹^ORCID,Mohan Jaidah²,Kim Harrison Sejoon²,Lee Jaebeom²,Young Chadwin D.²^ORCID,Colombo Luigi²,Summerfelt Scott R.³,San Tamer³,Kim Jiyoung²^ORCID

Affiliation:

1. Department of Electrical and Electronics Engineering, Kangwon National University, 1 Gangwondaehakgil, Chuncheon-si, Gangwon-do 24341, South Korea

2. Department of Materials Science and Engineering, The University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080, USA

3. Texas Instruments, 13121 TI Blvd, Dallas, Texas 75243, USA

Funder

Texas Instruments

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5052012

Reference26 articles.

1. Ferroelectricity in hafnium oxide thin films

2. Reliability Properties of Low-Voltage Ferroelectric Capacitors and Memory Arrays

3. A 64-Mb Embedded FRAM Utilizing a 130-nm 5LM Cu/FSG Logic Process

4. Large ferroelectric polarization of TiN/Hf0.5Zr0.5O2/TiN capacitors due to stress-induced crystallization at low thermal budget

5. Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400 °C) Hf0.5Zr0.5O2 films

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