Comparison of triethylgallium and tri‐isobutylgallium for growth of GaAs and AlGaAs by metalorganic molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108211
Reference12 articles.
1. The search for all-hydride MOMBE: examination of trimethylamine alane, trimethylamine gallane, and arsine
2. A comparative study of Ga(CH3)3, Ga(C2H5)3 and Ga(C4H9)3 in the low pressure MOCVD of GaAs
3. Organometallic Compounds of Group III. I. The Preparation of Gallium and Indium Alkyls from Organoaluminum Compounds
4. Effect of source chemistry and growth parameters on AlGaAs grown by metalorganic molecular beam epitaxy
5. Growth parameter dependence of background doping level in GaAs, In0.53Ga0.47As and AlxGa1−xAs grown by metalorganic molecular beam epitaxy
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