Effect of source chemistry and growth parameters on AlGaAs grown by metalorganic molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference23 articles.
1. GaAs growth in metal–organic MBE
2. Metalorganic Molecular-Beam Epitaxial Growth and Characterization of GaAs Using Trimethyl- and Triethyl-Gallium Sources
3. A comparative study of Ga(CH3)3 and Ga(C2H5)3 in the mombe of GaAs
4. Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and As4
5. Gallium‐ and arsenic‐induced oscillations of intensity of reflection high‐energy electron diffraction in the growth of (001) GaAs by chemical beam epitaxy
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3. Device quality AlGaAs grown by chemical beam epitaxy;Journal of Crystal Growth;1996-07
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