Spectroscopic charge pumping investigation of the amphoteric nature of Si/SiO2 interface states
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3597298
Reference25 articles.
1. What can electron paramagnetic resonance tell us about the Si/SiO[sub 2] system?
2. Interface traps andPbcenters in oxidized (100) silicon wafers
3. Effect of bias on radiation‐induced paramagnetic defects at the silicon‐silicon dioxide interface
4. Hole traps and trivalent silicon centers in metal/oxide/silicon devices
5. Electronic traps andPbcenters at the Si/SiO2interface: Band‐gap energy distribution
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