Ground-state lasing of stacked InAs∕GaAs quantum dots with GaP strain-compensation layers grown by metal organic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2208553
Reference17 articles.
1. Multidimensional quantum well laser and temperature dependence of its threshold current
2. Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum dot lasers
3. Comparison of radiative and structural properties of 1.3 μm InxGa(1−x)As quantum-dot laser structures grown by metalorganic chemical vapor deposition and molecular-beam epitaxy: Effect on the lasing properties
4. High-Frequency Modulation Characteristics of 1.3->tex<$muhboxm$>/tex<InGaAs Quantum Dot Lasers
5. 1.24 μm InGaAs/GaAs quantum dot laser grown by metalorganic chemical vapor deposition using tertiarybutylarsine
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1. High-temperature and continuous wave-operation of all-MOCVD grown InAs/GaAs quantum dot laser diodes with highly strained layer and low temperature p-AlGaAs cladding layer;Journal of Alloys and Compounds;2024-05
2. InAs/InP quantum dots stacking: Impact of spacer layer on optical properties;Journal of Applied Physics;2019-03-07
3. Enhanced near-infrared electroluminescence from a neodymium complex in organic light-emitting diodes with a solution-processed exciplex host;Applied Physics Letters;2019-01-21
4. High quality strain-compensated multiple InAs/AlGaNAs quantum dot layers grown by MBE;physica status solidi (c);2013-02-06
5. The effect of strained confinement layers in InP self-assembled quantum dot material;Semiconductor Science and Technology;2012-08-22
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