Bandgap engineering of α-(AlxGa1-x)2O3 by a mist chemical vapor deposition two-chamber system and verification of Vegard's Law-Reference-Cited by-同舟云学术

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Bandgap engineering of α-(AlxGa1-x)2O3 by a mist chemical vapor deposition two-chamber system and verification of Vegard's Law

Published:2018-08-06 Issue:6 Volume:113 Page:062102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Dang G. T.¹,Yasuoka T.²,Tagashira Y.²,Tadokoro T.³,Theiss W.⁴,Kawaharamura T.¹²

Affiliation:

1. Center for Nanotechnology, Research Institute, Kochi University of Technology, 185 Miyanokuchi, Tosayamada, Kami, Kochi 782-8502, Japan

2. School of Systems Engineering, Kochi University of Technology, 185 Miyanokuchi, Tosayamada, Kami, Kochi 782-8502, Japan

3. Techno-Synergy Inc., 2-46-16 Sanda-machi, Hachioui-shi, Tokyo 193-0832, Japan

4. WTheiss Hardware and Software, 11875 E Elin Ranch Road, Tucson, Arizona 85749, USA

Funder

JSPS Postdoctoral Fellowship for Overseas Researchers

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5037678

Reference38 articles.

1. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

2. Successful Growth of Conductive Highly Crystalline Sn-Doped $\alpha$-Ga$_{2}$O$_{3}$ Thin Films by Fine-Channel Mist Chemical Vapor Deposition

3. Fabrication and characterization of transparent conductive Sn-doped β-Ga2O3 single crystal

4. Conductivity control of Sn-doped α-Ga2O3thin films grown on sapphire substrates

5. Conducting Si-doped γ-Ga2O3 epitaxial films grown by pulsed-laser deposition

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2. Growth of α-Ga2O3 from Gallium Acetylacetonate under HCl Support by Mist Chemical Vapor Deposition;Nanomaterials;2024-07-18

3. Zr doping in pulsed-laser-deposited α - Ga2O3 for device applications;Physical Review Applied;2024-06-07

4. Si-doped (AlGa)₂O₃ growth on a-, m- and r-plane α-Al₂O₃ substrates by molecular beam epitaxy;Japanese Journal of Applied Physics;2024-05-01

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