Conducting Si-doped γ-Ga2O3 epitaxial films grown by pulsed-laser deposition-Reference-Cited by-同舟云学术

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Conducting Si-doped γ-Ga2O3 epitaxial films grown by pulsed-laser deposition

Published:2015-07 Issue: Volume:421 Page:23-26
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Oshima Takayoshi,Matsuyama Keitaro,Yoshimatsu Kohei,Ohtomo Akira

Funder

Hitachi Metals · Materials Science Foundation

Ministry of Education, Culture, Sports, Science and Technology

Japan Society for the Promotion of Science

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference30 articles.

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2. Wide-bandgap semiconductor materials: for their full bloom;Fujita;Jpn. J. Appl. Phys.,2015

3. Polymorphism of Ga2O3 and the system Ga2O3–H2O;Roy;J. Am. Chem. Soc.,1952

4. Structures of uncharacterised polymorphs of gallium oxide from total neutron diffraction;Playford;Chem. A Eur. J.,2013

5. Large-size β-Ga2O3 single crystals and wafers;Villora;J. Cryst. Growth,2004

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