Dose effects during solid phase epitaxial regrowth of boron‐implanted, germanium‐amorphized silicon induced by rapid thermal annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99882
Reference12 articles.
1. Chaneling effect measurements of the recrystallization of amorphous Si layers on crystal Si
2. Reordering of amorphous layers of Si implanted with31P,75As, and11B ions
3. Substrate‐orientation dependence of the epitaxial regrowth rate from Si‐implanted amorphous Si
4. Effects of electrically active impurities on the epitaxial regrowth rate of amorphized silicon and germanium
5. Effects of electrically active impurities on the epitaxial regrowth rate of amorphized silicon and germanium
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Rapid Thermal Annealing Characteristics of P+-Ion-Implanted Si(100) Wafers Studied by Spectroscopic Ellipsometry;Japanese Journal of Applied Physics;2005-02-08
2. Defects Induced by Deep Preamorphization and Their Effects on Metal Oxide Semiconductor Device Characteristics;Journal of The Electrochemical Society;1997-03-01
3. Recrystallization of Implanted Layers and Impurity Behavior in Silicon Crystals;Rapid Thermal Processing of Semiconductors;1997
4. Solid-phase epitaxy. Effects of irradiation, dopant, and pressure;Physica Status Solidi (a);1994-03-16
5. Crystallization kinetics of boron- and germanium-implanted 〈100〉 Si: a balance between doping and strain effects;Thin Solid Films;1992-12
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