Rapid Thermal Annealing Characteristics of P+-Ion-Implanted Si(100) Wafers Studied by Spectroscopic Ellipsometry
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Published:2005-02-08
Issue:2
Volume:44
Page:802-807
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:en
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Yoshida Keiya,Adachi Sadao
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering