Strain relaxation in nanopatterned strained silicon round pillars
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2431476
Reference11 articles.
1. Totally relaxed GexSi1−xlayers with low threading dislocation densities grown on Si substrates
2. Carrier mobilities and process stability of strained Si n- and p-MOSFETs on SiGe virtual substrates
3. Low‐field hole mobility of strained Si on (100) Si1−xGexsubstrate
4. Micro-Raman spectroscopy to study local mechanical stress in silicon integrated circuits
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