Growth of epitaxial orthorhombic YO1.5-substituted HfO2 thin film-Reference-Cited by-同舟云学术

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Growth of epitaxial orthorhombic YO1.5-substituted HfO2 thin film

Published:2015-07-20 Issue:3 Volume:107 Page:032910
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Shimizu Takao¹,Katayama Kiliha²,Kiguchi Takanori³,Akama Akihiro³,Konno Toyohiko J.³,Funakubo Hiroshi¹²

Affiliation:

1. Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta, Midrori-ku, Yokohama 226-8503, Japan

2. Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midrori-ku, Yokohama 226-8502, Japan

3. Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

Funder

Japan Society for the Promotion of Science (JSPS)

Ministry of Education, Culture, Sports, Science, and Technology (MEXT)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4927450

Reference25 articles.

1. Ferroelectricity in hafnium oxide thin films

2. Thin HfxZr1-xO2Films: A New Lead-Free System for Electrostatic Supercapacitors with Large Energy Storage Density and Robust Thermal Stability

3. Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

4. Ferroelectric Hafnium Oxide Based Materials and Devices: Assessment of Current Status and Future Prospects

5. Ferroelectricity in yttrium-doped hafnium oxide

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