Prospects for n-type doping of (AlxGa1−x)2O3 alloys-Reference-Cited by-同舟云学术

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Prospects for n-type doping of (AlxGa1−x)2O3 alloys

Published:2020-04-27 Issue:17 Volume:116 Page:172104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Varley Joel B.¹^ORCID,Perron Aurélien¹^ORCID,Lordi Vincenzo¹^ORCID,Wickramaratne Darshana²^ORCID,Lyons John L.³^ORCID

Affiliation:

1. Lawrence Livermore National Laboratory, Livermore, California 94550, USA

2. NRC Research Associate, Resident at Center for Computational Materials Science, US Naval Research Laboratory, Washington, DC 20375, USA

3. Center for Computational Materials Science, US Naval Research Laboratory, Washington, DC 20375, USA

Funder

U.S. Department of Energy

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/5.0006224

Reference48 articles.

1. A review of Ga2O3materials, processing, and devices

2. Optical Absorption and Photoconductivity in the Band Edge ofβ−Ga2O3

3. Experimental electronic structure of In2O3and Ga2O3

4. Carbon as a Shallow Donor in Transparent Conducting Oxides

5. Oxygen vacancies and donor impurities in β-Ga2O3

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1. Effect of Selenium Doping on the Electronic Properties of β-Ga2O3 by First-Principles Calculations;Journal of Electronic Materials;2024-07-24

2. The electronic structure, optical property and n-type conductivity for W-doped α-Ga₂O₃: hybrid functional study;Journal of Physics D: Applied Physics;2024-07-01

3. Achieving n-type doped monoclinic (InxAl1-x)2O3 alloys;Journal of Applied Physics;2024-06-17

4. Solid‐Solution Limits and Thorough Characterization of Bulk β‐(Al_xGa_1‐x)₂O Single Crystals Grown by the Czochralski Method;Advanced Materials Interfaces;2024-06-14

5. Design of Ga₂O₃/(AIGa)₂O₃ Double-Barrier Resonant Tunnelling Diode;2024 11th International Conference on Electrical, Electronic and Computing Engineering (IcETRAN);2024-06-03

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