Design of Ga2O3/(AIGa)2O3 Double-Barrier Resonant Tunnelling Diode-Reference-Cited by-同舟云学术

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Design of Ga₂O₃/(AIGa)₂O₃ Double-Barrier Resonant Tunnelling Diode

Published:2024-06-03 Issue: Volume:59 Page:1-4
ISSN:
Container-title:2024 11th International Conference on Electrical, Electronic and Computing Engineering (IcETRAN)
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Author:

Stanoiević Novak¹^ORCID,Demić Aleksandar²^ORCID,Wang Xizhe²,Vuković Nikola³^ORCID,Indjin Dragan²^ORCID,Radovanović Jelena³^ORCID

Affiliation:

1. School of Electrical Engineering University of Belgrade Vlatacom Institute of High Technologies,Belgrade,Serbia

2. School of Electronic and Electrical Engineering University of Leeds,Leeds,United Kingdom

3. School of Electrical Engineering University of Belgrade,Belgrade,Serbia

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10645074/10645075/10645113.pdf?arnumber=10645113

Reference26 articles.

1. Handbook of Terahertz Technology for Imaging;Saeedkia;Sensing and Communications. Elsevier.,2013

2. Growth of double-barrier β-(AIGa)203/Ga203 structure and heavily Sn-doped Ga203 layers using molecular-beam epitaxy Jpn;Hironori;J. Appl. Phys.,2020

3. Negative differential resistance in ZnO-based resonant tunneling diodes

4. Resonant Tunnelling and Intersubband Optical Properties of ZnO/ZnMgO Semiconductor Heterostructures: Impact of Doping and Layer Structure Variation

5. Theoretical investigation of optical intersubband transitions and infrared photodetection in β-(AlxGa1 − x)2O3/Ga2O3 quantum well structures

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