Theoretical investigation of optical intersubband transitions and infrared photodetection in β-(AlxGa1 − x)2O3/Ga2O3 quantum well structures
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, The University of Utah, Salt Lake City, Utah 84112-9202, USA
Funder
University of Utah Undergraduate Research Opportunities Program
Air Force Office of Scientific Research
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/am-pdf/10.1063/5.0001917
Reference68 articles.
1. Infrared Detectors
2. Tunneling in a finite superlattice
3. Resonant tunneling in semiconductor double barriers
4. Resonant Tunneling Through Double Barriers, Perpendicular Quantum Transport Phenomena in Superlattices, and Their Device Applications
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1. Suppression of Drain Current Leakage and Short-Channel Effect in Lateral Ga2O3 RF MOSFETs Using (Al x Ga1-x )2O3 Back-Barrier;IEEE Electron Device Letters;2023-11
2. Design of kV-Class and Low RON E-Mode β-Ga2O3 Current Aperture Vertical Transistors With Delta-Doped β-(AlxGa1−x)2O3/Ga2O3 Heterostructure;IEEE Transactions on Electron Devices;2023-11
3. Hydrogen-like Impurity States in β-Ga2O3/(AlxGa1−x)2O3 Core/Shell Nanostructures: Comparison between Nanorods and Nanotubes;Crystals;2023-08-09
4. A Strategic Review on MIR Photodetectors: Recent Status and Future Trends;International Conference on Innovative Computing and Communications;2023
5. Steady-state and transient electronic transport properties of β-(Al x Ga1–x )2O3/Ga2O3 heterostructures: An ensemble Monte Carlo simulation;Chinese Physics B;2022-11-01
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