Modification of interfacial carrier depletion in GaAs grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.352138
Reference10 articles.
1. Interface and doping profile characteristics with molecular‐beam epitaxy of GaAs: GaAs voltage varactor
2. Tin‐doping effects in GaAs films grown by molecular beam epitaxy
3. Effect of substrate surface treatment in molecular beam epitaxy on the vertical electronic transport through the film‐substrate interface
4. Effect of Thermal Etching on GaAs Substrate in Molecular Beam Epitaxy
5. Effects of etching with a mixture of HCl gas and H2on the GaAs surface cleaning in molecular‐beam epitaxy
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1. Off-axis electron holographic potential mapping across AlGaAs/AlAs/GaAs heterostructures;Journal of Applied Physics;2009-01
2. Quantum Confined Stark Effect of Excitons Localized at Very Thin InAs Layers Embedded in GaAs;physica status solidi (a);2002-04
3. Hydrogen plasma processing of GaAs and AlGaAs;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1993-11
4. Removal of GaAs surface contaminants using H2electron cyclotron resonance plasma treatment followed by Cl2chemical etching;Applied Physics Letters;1993-05-24
5. Buffer‐induced modulation of carrier density and mobility in a selectively doped heterostructure;Applied Physics Letters;1992-11-09
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