Buffer‐induced modulation of carrier density and mobility in a selectively doped heterostructure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108226
Reference13 articles.
1. Electron mobilities exceeding 107cm2/V s in modulation‐doped GaAs
2. Intersubband scattering effect on the mobility of a Si (100) inversion layer at low temperatures
3. Electronic Properties of a Semiconductor Superlattice II. Low Temperature Mobility Perpendicular to the Superlattice
4. Observation of intersubband scattering in a 2-dimensional electron system
5. Dependence of electron mobility in modulation‐doped GaAs‐(AlGa)As heterojunction interfaces on electron density and Al concentration
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Modulation of mobility in homoepitaxially-grown AlGaN/GaN heterostructures;physica status solidi (c);2009-01-20
2. The proximity effect of the regrowth interface on two-dimensional electron density in strained Si;Applied Physics Letters;2008-03-17
3. Increased mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron densities;Journal of Applied Physics;2000-07
4. Comment on ‘‘Buffer‐induced modulation of carrier density and mobility in a selectively doped heterostructure’’ [Appl. Phys. Lett. 61, 2308 (1992)];Applied Physics Letters;1994-01-31
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