Effects of etching with a mixture of HCl gas and H2on the GaAs surface cleaning in molecular‐beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.345144
Reference24 articles.
1. Film Deposition by Molecular-Beam Techniques
2. Preparation of Carbon‐Free GaAs Surfaces: AES and RHEED Analysis
3. Substrate chemical etching prior to molecular‐beam epitaxy: An x‐ray photoelectron spectroscopy study of GaAs {001} surfaces etched by the H2SO4‐H2O2‐H2O solution
4. Morphology of thermally etched GaAs substrate and molecular-beam epitaxial layers grown on its substrate
5. Correct substrate temperature monitoring with infrared optical pyrometer for molecular-beam epitaxy of III–V semiconductors
Cited by 43 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Controlled electrochemical growth of micro-scaled As2O3 and Ga2O3 oxide structures on p-type gallium arsenide;Applied Physics A;2022-08-25
2. Crystal structure tuning in GaAs nanowires using HCl;Nanoscale;2014
3. Synchrotron Photoemission Analysis of Semiconductor/Electrolyte Interfaces by the Frozen-Electrolyte Approach: Interaction of HCl in 2-Propanol with GaAs(100);The Journal of Physical Chemistry B;2006-01-19
4. Morphological evolution of III–V semiconductors and SiO2 during low energy electron enhanced dry etching;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2004-07
5. Etching of GaAs(100) surfaces by HCl: density functional calculations to the mechanisms;Surface Science;2001-03
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3