Etching of GaAs(100) surfaces by HCl: density functional calculations to the mechanisms-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Etching of GaAs(100) surfaces by HCl: density functional calculations to the mechanisms

Published:2001-03 Issue:1-3 Volume:475 Page:131-139
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Jenichen Arndt,Engler Cornelia

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference13 articles.

1. Chlorine and HCl radical beam etching of III–V semiconductors

2. Effects of etching with a mixture of HCl gas and H2on the GaAs surface cleaning in molecular‐beam epitaxy

3. Reaction of HCl with the GaAs(100) surface

4. Chemical dry etching of GaAs(100) by HC1: products, rate, and a kinetic model

5. Chemical dry etching mechanisms of GaAs surface by HCl and Cl2

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Extended glass-forming region in the AgCl-Ag2 S-As2 S3 ternary system;Journal of the American Ceramic Society;2018-03-25

2. Effect of Aluminum Wet Etching on GaAs and Poly-DiMethylSiloxane Substrate: Surface Morphology and Topography Analysis;Materials Focus;2018-02-01

3. Study on crystallization behavior of novel silver chloride based chalcogenide glasses;Journal of Alloys and Compounds;2017-06

4. Oxide Removal and Selective Etching of In from InSb(100) with TiCl4;The Journal of Physical Chemistry C;2011-09-22

5. Thermogravimetric study of GaAs chlorination between −30 and 900°C;Thermochimica Acta;2011-08

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP