Reaction of HCl with the GaAs(100) surface-Reference-Cited by-同舟云学术

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Reaction of HCl with the GaAs(100) surface

Published:1994-01 Issue:1-2 Volume:302 Page:192-204
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Nooney Matthew,Liberman Vladimir,Xu Mingde,Ludviksson Audunn,Martin Richard M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference45 articles.

1. Atomic layer etching chemistry of Cl2 on GaAs(100)

2. Kinetics of the reaction of gallium arsenide with molecular chlorine

3. Observation of competing arsenic removal channels in the Cl2+GaAs reaction

4. Dry etching of GaAs with Cl2: correlation between the surface Cl coverage and the etching rate at steady state

5. C. Su, H. Hou, G.H. Lee, Z.-G. Dai, M.F. Vernon and B.E. Bent, J. Vac. Sci. Technol., in press.

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Oxide Removal and Selective Etching of In from InSb(100) with TiCl4;The Journal of Physical Chemistry C;2011-09-22

2. Preparation of As-rich (2x4) - III-As (001) surfaces by wet chemical treatment and vacuum annealing;physica status solidi (c);2010-02

3. Synchrotron Photoemission Analysis of Semiconductor/Electrolyte Interfaces by the Frozen-Electrolyte Approach: Interaction of HCl in 2-Propanol with GaAs(100);The Journal of Physical Chemistry B;2006-01-19

4. Local-order of chemically-prepared GaAs() surfaces;Surface Science;2002-06

5. Etching of GaAs(100) surfaces by HCl: density functional calculations to the mechanisms;Surface Science;2001-03

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