Observation of competing arsenic removal channels in the Cl2+GaAs reaction
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101764
Reference12 articles.
1. Dynamics of laser stimulated interaction of chlorine with the GaAs(100) surface
2. Photochemical dry etching of GaAs
3. A critical discussion of emission mechanisms and reaction rates for the ion‐assisted etching of GaAs(100)
4. Radical beam/ion beam etching of GaAs
5. A crossed laser‐molecular beam study of the photodissociation dynamics of Fe(CO)5 at 193 nm
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2. Modeling of the chemically assisted ion beam etching process: Application to the GaAs etching by Cl2∕Ar+;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2007-01
3. Reactive Ion Beam Etching of In-Containing Compound Semiconductors in an Inductively Coupled Cl2/Ar Plasma;Japanese Journal of Applied Physics;2003-01-15
4. Initial surface reactions between Cl[sub 2] molecules and the GaAs (001) 2×4 surface;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2001
5. Inductively coupled plasma etching in ICl- and IBr-based chemistries. Part II: InP, InSb, InGaP, and InGaAs;Plasma Chemistry and Plasma Processing;2000
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