Synchrotron Photoemission Analysis of Semiconductor/Electrolyte Interfaces by the Frozen-Electrolyte Approach: Interaction of HCl in 2-Propanol with GaAs(100)-Reference-Cited by-同舟云学术

Synchrotron Photoemission Analysis of Semiconductor/Electrolyte Interfaces by the Frozen-Electrolyte Approach: Interaction of HCl in 2-Propanol with GaAs(100)

Published:2006-01-19 Issue:5 Volume:110 Page:2293-2301
ISSN:1520-6106
Container-title:The Journal of Physical Chemistry B
language:en
Short-container-title:J. Phys. Chem. B

Author:

Mayer Thomas¹,Lebedev Mikhail V.¹,Hunger Ralf¹,Jaegermann Wolfram¹

Affiliation:

1. TU-Darmstadt, FB Material- und Geowissenschaften, FG Oberflächenforschung, Petersenstrasse 23, 64287 Darmstadt, Germany, and A. F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya 26, St. Petersburg, 194021, Russia

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Surfaces, Coatings and Films,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/jp056375u

Reference38 articles.

1. Synchrotron-Induced Photoemission of Emersed GaAs Electrodes after Electrochemical Etching in Br2/H2O Solutions

2. XPS analysis of wet chemical etching of GaAs(110) by Br2–H2O: comparison of emersion and model experiments

3. Effects of etching with a mixture of HCl gas and H2on the GaAs surface cleaning in molecular‐beam epitaxy

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