Removal of GaAs surface contaminants using H2electron cyclotron resonance plasma treatment followed by Cl2chemical etching
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109277
Reference8 articles.
1. Film Deposition by Molecular-Beam Techniques
2. Substrate chemical etching prior to molecular‐beam epitaxy: An x‐ray photoelectron spectroscopy study of GaAs {001} surfaces etched by the H2SO4‐H2O2‐H2O solution
3. Effects of etching with a mixture of HCl gas and H2on the GaAs surface cleaning in molecular‐beam epitaxy
4. Chemical dry etching of GaAs and InP by Cl2using a new ultrahigh‐vacuum dry‐etching molecular‐beam‐epitaxy system
5. Damage and contamination‐free GaAs and AlGaAs etching using a novel ultrahigh‐vacuum reactive ion beam etching system with etched surface monitoring and cleaning method
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4. Estimation of Sidewall Nonradiative Recombination in GaInAsP/InP Wire Structures Fabricated by Low Energy Electron-Cyclotron-Resonance Reactive-Ion-Beam-Etching;Japanese Journal of Applied Physics;1998-06-15
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