The bonding of CAsacceptors in InxGa1−xAs grown by chemical beam epitaxy using carbon tetrabromide as the source of carbon-Reference-Cited by-同舟云学术

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The bonding of CAsacceptors in InxGa1−xAs grown by chemical beam epitaxy using carbon tetrabromide as the source of carbon

Published:1996-12-15 Issue:12 Volume:80 Page:6754-6760
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Ashwin M. J.,Pritchard R. E.,Newman R. C.,Joyce T. B.,Bullough T. J.,Wagner J.,Jeynes C.,Breuer S. J.,Jones R.,Briddon P. R.,Öberg S.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.363803

Reference33 articles.

1. Abruptp‐type doping profile of carbon atomic layer doped GaAs grown by flow‐rate modulation epitaxy

2. Characterization ofp‐type GaAs heavily doped with carbon grown by metalorganic molecular‐beam epitaxy

3. Carbon diffusion in undoped,n‐type, andp‐type GaAs

4. Ultrahigh doping of GaAs by carbon during metalorganic molecular beam epitaxy

5. Heavily carbon doped p-type GaAs and GaAlAs grown by metalorganic molecular beam epitaxy

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Acceptor–hydrogen complexes in semiconductors under pressure;Physica B: Condensed Matter;2001-12

2. Pressure dependence of local vibrational modes in InP;Physical Review B;2001-03-07

3. A comparative study of GaAs- and InP-based HBT growth by means of LP-MOVPE using conventional and non gaseous sources;Progress in Crystal Growth and Characterization of Materials;2000-01

4. Fourier transform infrared spectroscopy (FTIR), SIMS and Raman scattering of heavily carbon doped MOCVD grown In/sub 0.53/Ga/sub 0.47/As;Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors;1997

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