Temperature-dependent emission intensity and energy shift in InGaN/GaN multiple-quantum-well light-emitting diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1578539
Reference14 articles.
1. Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes
2. High dislocation densities in high efficiency GaN‐based light‐emitting diodes
3. “Blue” temperature-induced shift and band-tail emission in InGaN-based light sources
4. Temperature dependence of electroluminescence intensity of green and blue InGaN single-quantum-well light-emitting diodes
5. An analysis of temperature dependent photoluminescence line shapes in InGaN
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