Affiliation:
1. Hong Kong University of Science and Technology Hong Kong China
2. Southern University of Science and Technology Shenzhen China
Abstract
In this study, we explored the electrical characteristics of micro‐LEDs with various pixel sizes on GaN substrates, demonstrating
that small sizes have high current density due to superior current
spreading. Due to the p‐electrode ohmic contact's temperature
dependence, which is supported by TLM measurements, the ideal
factor declines as temperature rises. We also show the temperature
sensitivity in proportion to device size at a certain current density,
which is susceptible to carrier non‐radiative recombination
brought on by surface defects. We comprehensively present the
thermal properties of GaN‐on‐GaN homoepitaxy micro‐LEDs,
laying the groundwork for improved device stability and reliability.