First-principles investigations of nitrogen-doping effects on defect aggregation processes in Czochralski Si
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1858057
Reference33 articles.
1. T. Abe, H. Harada, N. Ozawa, and K. Adomi, Oxygen, Carbon, Hydrogen, and Nitrogen in Crystalline Silicon, edited by J. C. Mikkelsen, Jr., S. J. Pearton, J. W. Corbett, and S. J. Pennycook, MRS Symposia Proceedings No. 59 (Materials Research Society, Pittsburgh, 1986), p. 537.
2. Theoretical investigation of nitrogen-doping effect on vacancy aggregation processes in Si
3. First-principles calculation of the interaction between nitrogen atoms and vacancies in silicon
4. H. Kageshima, A. Taguchi, and K. Wada, Defect and Impurity Engineered Semiconductors and Devices III, edited by S. Ashok, J. Chevallier, N. M. Johnson, B. L. Sopori, and H. Okushi, MRS Symposia Proceedings No. 719 (Materials Research Society, Pittsburgh, 2002), p. 79.
5. Oxygen precipitation in nitrogen-doped Czochralski-grown silicon crystals
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