Theoretical investigation of nitrogen-vacancy defects in silicon-Reference-Cited by-同舟云学术

Theoretical investigation of nitrogen-vacancy defects in silicon

Published:2022-02-01 Issue:2 Volume:12 Page:025112
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Potsidi M. S.¹,Kuganathan N.²³^ORCID,Christopoulos S.-R. G.²^ORCID,Sarlis N. V.¹^ORCID,Chroneos A.²⁴,Londos C. A.¹^ORCID

Affiliation:

1. Section of Condensed Matter Physics, Department of Physics, National and Kapodistrian University of Athens, Panepistimiopolis Zografos, Athens 157 84, Greece

2. Faculty of Engineering, Environment and Computing, Coventry University, Priory Street, Coventry CV1 5FB, United Kingdom

3. Department of Materials, Imperial College, London SW7 2AZ, United Kingdom

4. Department of Electrical and Computer Engineering, University of Thessaly, 38221 Volos, Greece

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0075799

Reference51 articles.

1. Defects in Semiconductors

2. Oxygen defect processes in silicon and silicon germanium

3. Effects of nitrogen on dislocation behavior and mechanical strength in silicon crystals

4. Nitrogen effect on oxygen precipitation in Czochralski silicon

5. Direct Observation of Crystal-Originated Particles on Czochralski-Grown Silicon Wafer Surface and Effect on Gate Oxide Reliability

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