High resolution electron microscopy and x-ray photoelectron spectroscopy studies of heteroepitaxial SixGe(1−x) alloys produced through laser induced processing-Reference-Cited by-同舟云学术

High resolution electron microscopy and x-ray photoelectron spectroscopy studies of heteroepitaxial SixGe(1−x) alloys produced through laser induced processing

Published:1998-06 Issue:22 Volume:72 Page:2877-2879
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Frangis N.,Van Landuyt J.,Larciprete R.,Martelli S.,Borsella E.,Chiussi S.,Castro J.,León B.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.121487

Reference18 articles.

1. Epitaxial NiSi2formation by pulsed laser irradiation of thin Ni layers deposited on Si substrates

2. Epitaxial GexSi1−x/Si (100) structures produced by pulsed laser mixing of evaporated Ge on Si (100) substrates

3. Pulsed laser assisted epitaxy of GexSi1−xalloys on Si 〈100〉

4. Demonstration of laser‐assisted epitaxial deposition of GexSi1−xalloys on single‐crystal Si

5. Composition and structure of Si–Ge layers produced by ion implantation and laser melting

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