Pulsed laser assisted epitaxy of GexSi1−xalloys on Si 〈100〉
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105676
Reference11 articles.
1. Epitaxial GexSi1−x/Si (100) structures produced by pulsed laser mixing of evaporated Ge on Si (100) substrates
2. Fabrication of patterned Gex/Si1−x/Si layers by pulsed laser induced epitaxy
3. Demonstration of laser‐assisted epitaxial deposition of GexSi1−xalloys on single‐crystal Si
4. Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures
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2. Materials science issues related to the fabrication of highly doped junctions by laser annealing of Group IV semiconductors;Laser Annealing Processes in Semiconductor Technology;2021
3. Investigation of recrystallization and stress relaxation in nanosecond laser annealed Si1−xGex/Si epilayers;Applied Surface Science;2020-10
4. Formation of a miscibility gap in laser-crystallized poly-SiGe thin films;MRS Proceedings;2005
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