Fabrication of patterned Gex/Si1−x/Si layers by pulsed laser induced epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104989
Reference5 articles.
1. Si/Ge0.3Si0.7/Si heterojunction bipolar transistor made with Si molecular beam epitaxy
2. Heterojunction bipolar transistor fabrication using Si1−xGexselective epitaxial growth by gas source silicon molecular beam epitaxy
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4. Formation of InxGa1−xAs/GaAs heteroepitaxial layers using a pulsed laser driven rapid melt‐solidification process
5. Ultra-shallow high-concentration boron profiles for CMOS processing
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3. Atomic force microscopy study of the morphological modifications induced by laser processing of Si[sub (1−x)]Ge[sub x]/Si samples;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-05
4. KrF laser epitaxy of silicon germanium alloy layers by irradiation of Si[sub (1−x)]Ge[sub x]/Si (100) structures;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-05
5. Producción y tratamiento de películas de Si1-xGex mediante técnicas asistidas por láser de excímero;Revista de Metalurgia;1998-04-30
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