Silicon germanium tin alloys formed by pulsed laser induced epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4714768
Reference25 articles.
1. Electronic properties of metastableGexSn1−xalloys
2. Band structure calculations of Si–Ge–Sn alloys: achieving direct band gap materials
3. Interband Transitions inSnxGe1−xAlloys
4. TIN-BASED GROUP IV SEMICONDUCTORS: New Platforms for Opto- and Microelectronics on Silicon
5. Compliant tin-based buffers for the growth of defect-free strained heterostructures on silicon
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