Characterization of stacking faults in 4H-SiC epilayers by room-temperature microphotoluminescence mapping
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2937097
Reference18 articles.
1. Step-controlled epitaxial growth of SiC: High quality homoepitaxy
2. Long Term Operation of 4.5kV PiN and 2.5kV JBS Diodes
3. High-Power SiC Diodes: Characteristics, Reliability and Relation to Material Defects
4. Structure of recombination-induced stacking faults in high-voltage SiC p–n junctions
5. Nondestructive characterization of dislocations and micropipes in high-resistivity 6H–SiC wafers by deep-level photoluminescence mapping
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4. Observation of broad triangular Frank-type stacking faults and characterization of stacking faults with emission wavelengths below 430 nm in 4H–SiC epitaxial layers;Applied Physics Letters;2024-04-08
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