Electrical properties of Si-Si interfaces obtained by room temperature covalent wafer bonding-Reference-Cited by-同舟云学术

Electrical properties of Si-Si interfaces obtained by room temperature covalent wafer bonding

Published:2018-02-28 Issue:8 Volume:123 Page:085701
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Jung A.¹²,Zhang Y.²,Arroyo Rojas Dasilva Y.²,Isa F.¹²^ORCID,von Känel H.¹²

Affiliation:

1. Laboratory for Solid State Physics, ETH Zürich, Otto-Stern-Weg 1, Zürich CH-8093, Switzerland

2. Electron Microscopy Center, Empa, Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, Dübendorf CH-8600, Switzerland

Funder

Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung

Kommission für Technologie und Innovation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5020139

Reference17 articles.

1. SEMICONDUCTOR WAFER BONDING

2. Wafer bonding technology and its applications in optoelectronic devices and materials

3. Hydrophobic silicon wafer bonding

4. Electrical Characterization of Bonding Interfaces

5. Surface activated bonding of silicon wafers at room temperature

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