Low‐temperature and selective growth of β‐SiC using the SiH2Cl2/C3H8/H2/HCl gas system
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343922
Reference6 articles.
1. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices
2. Chemically-formed buffer layers for growth of cubic silicon carbide on silicon single crystals
3. Epitaxial growth of β-SiC single crystals by successive two-step CVD
4. ‘‘Buffer‐layer’’ technique for the growth of single crystal SiC on Si
5. Selective Epitaxial Deposition of Silicon
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2. Filling 4H-SiC trench towards selective epitaxial growth by adding HCl to CVD process;Applied Physics Express;2015-06-01
3. 3C-SiC Heteroepitaxial Growth on Silicon: The Quest for Holy Grail;Critical Reviews in Solid State and Materials Sciences;2014-09-25
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