Filling 4H-SiC trench towards selective epitaxial growth by adding HCl to CVD process-Reference-Cited by-同舟云学术

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Filling 4H-SiC trench towards selective epitaxial growth by adding HCl to CVD process

Published:2015-06-01 Issue:6 Volume:8 Page:065502
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Ji Shiyang,Kojima Kazutoshi,Kosugi Ryoji,Saito Shingo,Sakuma Yuuki,Tanaka Yasunori,Yoshida Sadafumi,Himi Hiroaki,Okumura Hajime

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/8/i=6/a=065502/pdf

Reference25 articles.

1. Theory of Semiconductor Superjunction Devices

2. Which is cooler, trench or multi-epitaxy? Cutting edge approach for the silicon limit by the super trench power MOS-FET (STM)

3. Development of SiC Super-Junction (SJ) Devices by Multi-Epitaxial Growth

4. A new generation of high voltage MOSFETs breaks the limit line of silicon

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1. Effect of Mesa Sidewall Angle on 4H‐Silicon Carbide Trench Filling Epitaxy Using Trichlorosilane and Hydrogen Chloride;Advanced Materials Interfaces;2024-09-06

2. Aluminum channeling in 4H-SiC by high-energy implantation above 10 MeV;Materials Science in Semiconductor Processing;2024-08

3. Epitaxial trench refill of 4H-SiC by chlorinated chemistry;Applied Physics Letters;2024-05-06

4. Three-Dimensional Epitaxy of Low-Defect 3C-SiC on a Geometrically Modified Silicon Substrate;Materials;2024-03-30

5. Comparison of 1.2 kV SiC Superjunction MOSFETs Formed by Multi-epitaxial Growth and Trench-filling Epitaxial Growth;IEEJ Transactions on Electronics, Information and Systems;2024-03-01

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