Which is cooler, trench or multi-epitaxy? Cutting edge approach for the silicon limit by the super trench power MOS-FET (STM)-Reference-Cited by-同舟云学术

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Which is cooler, trench or multi-epitaxy? Cutting edge approach for the silicon limit by the super trench power MOS-FET (STM)

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Container-title:12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)
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Author:

Minato T.,Nitta T.,Uenisi A.,Yano M.,Harada M.,Hine S.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6912/18590/00856776.pdf?arnumber=856776

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