Vacancy-engineering implants for high boron activation in silicon on insulator-Reference-Cited by-同舟云学术

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Vacancy-engineering implants for high boron activation in silicon on insulator

Published:2006-02-20 Issue:8 Volume:88 Page:082112
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Smith A. J.,Cowern N. E. B.,Gwilliam R.,Sealy B. J.,Colombeau B.,Collart E. J. H.,Gennaro S.,Giubertoni D.,Bersani M.,Barozzi M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2178487

Reference13 articles.

1. Transient diffusion of ion‐implanted B in Si: Dose, time, and matrix dependence of atomic and electrical profiles

2. Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

3. Atomistic study of the dissolution of small boron interstitial clusters in c-Si

4. Evidence on the mechanism of boron deactivation in Ge-preamorphized ultrashallow junctions

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1. Formation of Ultra-Shallow Junctions;Reference Module in Materials Science and Materials Engineering;2016

2. Efficient thermoelectric performance in silicon nano-films by vacancy-engineering;Nano Energy;2015-09

3. Modeling of defects, dopant diffusion and clustering in silicon;Journal of Computational Electronics;2013-10-23

4. Dopant Diffusion: Modeling and Technological Challenges;Silicon Technologies;2013-03-19

5. Formation of Ultra-Shallow Junctions;Comprehensive Semiconductor Science and Technology;2011

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