The effect of growth temperature on the electrical properties of AlInAs/InP grown by molecular beam epitaxy and metal‐organic chemical‐vapor deposition-Reference-Cited by-同舟云学术

The effect of growth temperature on the electrical properties of AlInAs/InP grown by molecular beam epitaxy and metal‐organic chemical‐vapor deposition

Published:1993-12 Issue:11 Volume:74 Page:6726-6733
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Luo J. K.,Thomas H.,Clark S. A.,Williams R. H.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.355069

Reference29 articles.

1. 1.5–1.6‐μm Ga0.47In0.53As/Al0.48In0.52As multiquantum well lasers grown by molecular beam epitaxy

2. High-transconductance AlInAs/GaInAs HIFETs grown by MOCVD

3. The effect of interface and alloy quality on the DC and RF performance of Ga/sub 0.47/In/sub 0.53/As-Al/sub 0.48/In/sub 0.52/As HEMTs

4. Electrical and structural characterization of highly perfect semi-insulating InAlAs grown by molecular beam epitaxy

5. An In0.52Al0.48As/n+-In0.53Ga0.47As MISFET with a heavily doped channel

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