Electrical and structural characterization of highly perfect semi-insulating InAlAs grown by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. GaInAs‐AlInAs structures grown by molecular beam epitaxy
2. The growth of high mobility InGaAs and InAlAs layers by molecular beam epitaxy
3. The growth and characterization of nominally undoped Al1−xInxAs grown by molecular beam epitaxy
4. Dynamical x‐ray rocking curve simulations of nonuniform InGaAs and InGaAsP using Abeles’ matrix method
5. Theory of X-Ray Diffraction in Crystals;Zachariasen,1967
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Low temperature MBE grown AlInAs: Investigation of current voltage and low frequency noise behaviour of schottky diodes;Solid-State Electronics;1997-06
2. Surface photovoltage spectroscopy of InxAl1−xAs epilayers;Journal of Applied Physics;1995-12-15
3. The effect of growth temperature on the electrical properties of AlInAs/InP grown by molecular beam epitaxy and metal‐organic chemical‐vapor deposition;Journal of Applied Physics;1993-12
4. Deep Level Characterization of LP-MOCVD Grown Al0.48In0.52As;MRS Proceedings;1993
5. Damage‐induced high‐resistivity regions in Al0.48In0.52As;Applied Physics Letters;1989-10-23
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