Ellipsometric study of Si0.5Ge0.5/Si strained‐layer superlattices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108607
Reference15 articles.
1. X‐ray rocking curve analysis of superlattices
2. Strain relaxation kinetics in Si1−xGex/Si heterostructures
3. Refractive index determination of SiGe using reactive ion etching/ellipsometry: Application of the depth profiling of the GE concentration
4. Ellipsometry for rapid characterization of Si1−xGexlayers
5. Spectroscopic ellipsometric characterization of Si/Si1−xGex strained-layer supperlattices
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1. Spectro-ellipsometric monitoring and characterization of the growth of Si/Si1−xGex multiple quantum wells;Journal of Crystal Growth;2002-04
2. Real-time spectro-ellipsometric characterization of Si/Si[sub 1−x]Ge[sub x] multiple quantum wells grown on Si(100) substrates;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2002
3. Spectroscopic ellipsometry of SixGe1−x/Si: a tool for composition and profile analysis in strained heterostructures used in the microelectronics industry;Thin Solid Films;2000-09
4. Refined model for spectroscopic ellipsometry analysis of SixGe1−x/Si strained heterostructures;Applied Physics Letters;2000-04-10
5. Magneto-optical dispersion of Si1−xGex epitaxial layers and Si/Ge superlattices;Journal of Applied Physics;1997-02
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