Refractive index determination of SiGe using reactive ion etching/ellipsometry: Application of the depth profiling of the GE concentration
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107314
Reference11 articles.
1. Physics and applications of GexSi1-x/Si strained-layer heterostructures
2. 75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors
3. Low‐temperature silicon epitaxy by ultrahigh vacuum/chemical vapor deposition
4. Low‐temperature silicon epitaxy by ultrahigh vacuum/chemical vapor deposition
5. Intrinsic Optical Absorption in Germanium-Silicon Alloys
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1. Advanced Spectroscopic Ellipsometry Application for Multi-Layers SiGe at 28nm Node and Beyond;ECS Transactions;2013-08-31
2. Alternative Plasmonic Materials: Beyond Gold and Silver;Advanced Materials;2013-05-15
3. Interface roughening and defect nucleation during solid phase epitaxy regrowth of doped and intrinsic Si0.83Ge0.17 alloys;Journal of Applied Physics;2007-05-15
4. Amorphous–crystalline interface evolution during Solid Phase Epitaxy Regrowth of SiGe films amorphized by ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2007-04
5. Refractive index determination: an application of lensless Fourier digital holography;Optical Engineering;2006-10-01
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