Spectroscopic ellipsometric characterization of Si/Si1−xGex strained-layer supperlattices-Reference-Cited by-同舟云学术

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Spectroscopic ellipsometric characterization of Si/Si1−xGex strained-layer supperlattices

Published:1993-01 Issue:1-4 Volume:63 Page:52-56
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Yao H.,Woollam J.A.,Wang P.J.,Tejwani M.J.,Alterovitz S.A.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference15 articles.

1. Prospects and challenges for SiGe strained-layer epitaxy

2. Heterojunction bipolar transistors using Si-Ge alloys

3. GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy

4. 75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors

5. Ellipsometry and Polarized Light;Azzam,1977

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1. Optical Properties of Cu(In,Ga)Se2;Spectroscopic Ellipsometry for Photovoltaics;2018

2. Optical constants of Cu(In, Ga)Se2 for arbitrary Cu and Ga compositions;Journal of Applied Physics;2015-05-21

3. Ellipsometry studies of Si/Ge superlattices with embedded Ge dots;Applied Physics A;2013-05-31

4. Comparative Study of Hot-Wire Chemical Vapor Deposition onto (100) Si Near 600°C: Epitaxial and Polycrystalline Silicon Films;MRS Proceedings;2007

5. Monitoring and modeling silicon homoepitaxy breakdown with real-time spectroscopic ellipsometry;Journal of Applied Physics;2005-05-15

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